A theoretical analysis of quantum-wire fabrication by vacancy-enhanced interdiffusion of quantum wells

K. S. Chan; Y. H. Wong; Edwin Y.B. Pun; H. P. Ho; Po S. Chung

doi:10.1109/2944.720482

A theoretical analysis of quantum-wire fabrication by vacancy-enhanced interdiffusion of quantum wells

K. S. Chan^*
, Y. H. Wong
, Edwin Y.B. Pun
, H. P. Ho
, Po S. Chung

^*Corresponding author for this work

IEEE
City University of Hong Kong

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The fabrication of quantum-wire structures using vacancy enhanced interdiffusion of quantum wells is analyzed theoretically. A phenomenological equation is used to describe the effects of strain on vacancy diffusion. The quantum-wire confinement potentials are studied as a function of the trench opening widths and the separation distances from the SiO ₂-AlGaAs interface. The lateral confinement energy is not a monotonic function of the trench opening width. It first increases and then decreases when the trench opening width is decreased. When the separation distance of the quantum wire from the interface is reduced, the confinement potential is changed from a nonsquare profile to a square-well profile.

Original language	English
Pages (from-to)	701-705
Number of pages	5
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	4
Issue number	4
DOIs	https://doi.org/10.1109/2944.720482
State	Published - Jul 1998
Externally published	Yes

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abstract = "The fabrication of quantum-wire structures using vacancy enhanced interdiffusion of quantum wells is analyzed theoretically. A phenomenological equation is used to describe the effects of strain on vacancy diffusion. The quantum-wire confinement potentials are studied as a function of the trench opening widths and the separation distances from the SiO 2-AlGaAs interface. The lateral confinement energy is not a monotonic function of the trench opening width. It first increases and then decreases when the trench opening width is decreased. When the separation distance of the quantum wire from the interface is reduced, the confinement potential is changed from a nonsquare profile to a square-well profile.",

author = "Chan, \{K. S.\} and Wong, \{Y. H.\} and Pun, \{Edwin Y.B.\} and Ho, \{H. P.\} and Chung, \{Po S.\}",

year = "1998",

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AU - Pun, Edwin Y.B.

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AU - Chung, Po S.

PY - 1998/7

Y1 - 1998/7

N2 - The fabrication of quantum-wire structures using vacancy enhanced interdiffusion of quantum wells is analyzed theoretically. A phenomenological equation is used to describe the effects of strain on vacancy diffusion. The quantum-wire confinement potentials are studied as a function of the trench opening widths and the separation distances from the SiO 2-AlGaAs interface. The lateral confinement energy is not a monotonic function of the trench opening width. It first increases and then decreases when the trench opening width is decreased. When the separation distance of the quantum wire from the interface is reduced, the confinement potential is changed from a nonsquare profile to a square-well profile.

AB - The fabrication of quantum-wire structures using vacancy enhanced interdiffusion of quantum wells is analyzed theoretically. A phenomenological equation is used to describe the effects of strain on vacancy diffusion. The quantum-wire confinement potentials are studied as a function of the trench opening widths and the separation distances from the SiO 2-AlGaAs interface. The lateral confinement energy is not a monotonic function of the trench opening width. It first increases and then decreases when the trench opening width is decreased. When the separation distance of the quantum wire from the interface is reduced, the confinement potential is changed from a nonsquare profile to a square-well profile.

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DO - 10.1109/2944.720482

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A theoretical analysis of quantum-wire fabrication by vacancy-enhanced interdiffusion of quantum wells

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