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Anisotropy of the elastic properties of wurtzite InN epitaxial films

  • V. S. Harutyunyan*
  • , P. Specht
  • , J. Ho
  • , E. R. Weber
  • *Corresponding author for this work
  • University of California at Berkeley
  • Lawrence Berkeley National Laboratory

Research output: Contribution to journalArticlepeer-review

Abstract

The anisotropy of elastic bulk constants of wurtzite InN is analyzed theoretically on the basis of available data for elastic constants. A considerable anisotropy is evaluated both for Young's modulus and Poisson ratio of highly textured InN epitaxial films deposited on the basal plane. A comparative analysis of elastic properties is conducted for wurtzite InN, GaN and AlN. An approach is suggested for estimating vacancy concentrations on the basis of SIMS and x-ray diffraction measurements.

Original languageEnglish
Pages (from-to)79-89
Number of pages11
JournalDefect and Diffusion Forum
Volume226-228
Issue number1
DOIs
StatePublished - 2004
Externally publishedYes

Keywords

  • Elastic Anisotropy
  • Point Defects
  • Strain
  • Wurtzite Nitrides
  • X-Ray Diffraction

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