Crystallization-induced stress in phase change random access memory

M. H. Li; J. M. Li; L. P. Shi; H. X. Yang; T. C. Chong; Y. Li

doi:10.1557/proc-1137-ee05-10

Crystallization-induced stress in phase change random access memory

M. H. Li
, J. M. Li
, L. P. Shi
, H. X. Yang
, T. C. Chong
, Y. Li

Agency for Science, Technology and Research, Singapore
National University of Singapore

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge₂Sb₂Te₅ (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments
Publisher	Materials Research Society
Pages	113-118
Number of pages	6
ISBN (Print)	9781615673865
DOIs	https://doi.org/10.1557/proc-1137-ee05-10
State	Published - 2008
Externally published	Yes
Event	Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments - Boston, MA, United States Duration: 1 Dec 2008 → 5 Dec 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1137
ISSN (Print)	0272-9172

Conference

Conference	Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments
Country/Territory	United States
City	Boston, MA
Period	1/12/08 → 5/12/08

Access to Document

10.1557/proc-1137-ee05-10

Cite this

Li, M. H., Li, J. M., Shi, L. P., Yang, H. X., Chong, T. C., & Li, Y. (2008). Crystallization-induced stress in phase change random access memory. In Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments (pp. 113-118). (Materials Research Society Symposium Proceedings; Vol. 1137). Materials Research Society. https://doi.org/10.1557/proc-1137-ee05-10

@inproceedings{865974784f054b0180bd5709b8f53ac5,

title = "Crystallization-induced stress in phase change random access memory",

abstract = "Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge2Sb2Te5 (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films.",

author = "Li, \{M. H.\} and Li, \{J. M.\} and Shi, \{L. P.\} and Yang, \{H. X.\} and Chong, \{T. C.\} and Y. Li",

year = "2008",

doi = "10.1557/proc-1137-ee05-10",

language = "英语",

isbn = "9781615673865",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "113--118",

booktitle = "Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments",

note = "Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments ; Conference date: 01-12-2008 Through 05-12-2008",

}

Li, MH, Li, JM, Shi, LP, Yang, HX, Chong, TC & Li, Y 2008, Crystallization-induced stress in phase change random access memory. in Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments. Materials Research Society Symposium Proceedings, vol. 1137, Materials Research Society, pp. 113-118, Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments, Boston, MA, United States, 1/12/08. https://doi.org/10.1557/proc-1137-ee05-10

Crystallization-induced stress in phase change random access memory. / Li, M. H.; Li, J. M.; Shi, L. P. et al.
Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments. Materials Research Society, 2008. p. 113-118 (Materials Research Society Symposium Proceedings; Vol. 1137).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Crystallization-induced stress in phase change random access memory

AU - Li, M. H.

AU - Li, J. M.

AU - Shi, L. P.

AU - Yang, H. X.

AU - Chong, T. C.

AU - Li, Y.

PY - 2008

Y1 - 2008

N2 - Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge2Sb2Te5 (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films.

AB - Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge2Sb2Te5 (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films.

UR - https://www.scopus.com/pages/publications/70450119927

U2 - 10.1557/proc-1137-ee05-10

DO - 10.1557/proc-1137-ee05-10

M3 - 会议稿件

AN - SCOPUS:70450119927

SN - 9781615673865

T3 - Materials Research Society Symposium Proceedings

SP - 113

EP - 118

BT - Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments

PB - Materials Research Society

T2 - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments

Y2 - 1 December 2008 through 5 December 2008

ER -

Li MH, Li JM, Shi LP, Yang HX, Chong TC, Li Y. Crystallization-induced stress in phase change random access memory. In Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments. Materials Research Society. 2008. p. 113-118. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-1137-ee05-10

Crystallization-induced stress in phase change random access memory

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