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Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors

  • Xuming Zou
  • , Chun Wei Huang
  • , Lifeng Wang
  • , Long Jing Yin
  • , Wenqing Li
  • , Jingli Wang
  • , Bin Wu
  • , Yunqi Liu
  • , Qian Yao
  • , Changzhong Jiang
  • , Wen Wei Wu
  • , Lin He
  • , Shanshan Chen
  • , Johnny C. Ho
  • , Lei Liao*
  • *Corresponding author for this work
  • Wuhan University
  • National Yang Ming Chiao Tung University
  • Chinese Academy of Sciences
  • Beijing Normal University
  • Xiamen University
  • City University of Hong Kong

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)2062-2069
Number of pages8
JournalAdvanced Materials
Volume28
Issue number10
DOIs
StatePublished - Mar 2016
Externally publishedYes

Keywords

  • 2D materials
  • boron nitride
  • dielectric engineering
  • heterostructures
  • transistors

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