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Diffusivity of Er3+ into LiNbO3 as a function of stoichiometry

  • De Long Zhang*
  • , Ping Rang Hua
  • , Qing Zhong Yang
  • , Hong Li Liu
  • , Yu Ming Cui
  • , E. Y.B. Pun
  • *Corresponding author for this work
  • City University of Hong Kong
  • Tianjin University

Research output: Contribution to journalArticlepeer-review

Abstract

Diffusivity of Er3+ into LiNbO3 crystal has been studied as a function of Li2 O content and crystal orientation. The Li2 O content in single-crystal LiNbO3 plates was adjusted by Li-rich vapor transport equilibration (VTE) technique. Five X -cut and five Z -cut congruent substrates were VTE treated at first at 1100 °C for different durations ranging from 6 to 74 h, and then were subjected to a special post-VTE anneal procedure at the same temperature for 60 h to obtain homogeneous Li2 O content. The Li2 O content was determined from the measured fundamental optical absorption edge. Its homogeneity is verified by measuring the optical absorption edge as a function of the crystal thickness. After the composition characterization, the substrates were coated with 45 nm thick Er film and annealed at 1130 °C for 40 h in argon atmosphere. The Er3+ profile was analyzed by secondary ion mass spectrometry. The results show that the Er3+ diffusivity decreases monoexponentially with the increase in the Li2 O content in both cases of X - and Z -cut. As the Li2 O content is increased from the congruent point (48.4 mol %) to the near-stoichiometric composition (∼49.9 mol %), the diffusivity decreases from 0.107 (0.072) to 0.017 (0.018) μ m2 /h for the Z (X) -cut substrate. The diffusion shows considerable anisotropy for the lower Li2 O content and the diffusivity in a Z -cut substrate is larger. The anisotropy weakens gradually with the increase in the Li2 O content, and the diffusivities in the X - and Z -cut substrates ultimately tend to a same value (∼0.02 μ m2 /h) at the Li-rich phase boundary. After the Er diffusion procedure, endface coupling experiment was carried out to check if a planar waveguide layer was formed near the Er-diffused surface due to the Li outdiffusion. The results show that the Li outdiffusion did not accompany the Er diffusion procedure.

Original languageEnglish
Article number023514
JournalJournal of Applied Physics
Volume105
Issue number2
DOIs
StatePublished - 2009
Externally publishedYes

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