Erbium doping in silicon by thermal indiffusion

Emile Man Wah Wong; Hongwei Liu; Shi Qing Man; Edwin Yue Bun Pun; Po Sheun Chung

doi:10.1143/jjap.37.3669

Erbium doping in silicon by thermal indiffusion

Emile Man Wah Wong^*
, Hongwei Liu
, Shi Qing Man
, Edwin Yue Bun Pun
, Po Sheun Chung

^*Corresponding author for this work

City University of Hong Kong

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb₂O₃) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

Original language	English
Pages (from-to)	3669-3672
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	6 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.3669
State	Published - Jun 1998
Externally published	Yes

Keywords

Erbium
Photoluminescence
Rare-earth ion
Silicon
Thermal indiffusion

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10.1143/jjap.37.3669

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title = "Erbium doping in silicon by thermal indiffusion",

abstract = "A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.",

keywords = "Erbium, Photoluminescence, Rare-earth ion, Silicon, Thermal indiffusion",

author = "Wong, \{Emile Man Wah\} and Hongwei Liu and Man, \{Shi Qing\} and Pun, \{Edwin Yue Bun\} and Chung, \{Po Sheun\}",

year = "1998",

month = jun,

doi = "10.1143/jjap.37.3669",

language = "英语",

volume = "37",

pages = "3669--3672",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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TY - JOUR

T1 - Erbium doping in silicon by thermal indiffusion

AU - Wong, Emile Man Wah

AU - Liu, Hongwei

AU - Man, Shi Qing

AU - Pun, Edwin Yue Bun

AU - Chung, Po Sheun

PY - 1998/6

Y1 - 1998/6

N2 - A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

AB - A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

KW - Erbium

KW - Photoluminescence

KW - Rare-earth ion

KW - Silicon

KW - Thermal indiffusion

UR - https://www.scopus.com/pages/publications/0032093407

U2 - 10.1143/jjap.37.3669

DO - 10.1143/jjap.37.3669

M3 - 文章

AN - SCOPUS:0032093407

SN - 0021-4922

VL - 37

SP - 3669

EP - 3672

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 6 SUPPL. B

ER -

Erbium doping in silicon by thermal indiffusion

Abstract

Keywords

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