Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

W. H. Wong; E. Y.B. Pun

doi:10.1116/1.1368678

Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

W. H. Wong^*
, E. Y.B. Pun

^*Corresponding author for this work

City University of Hong Kong

Research output: Contribution to journal › Conference article › peer-review

37 Scopus citations

Abstract

Three-dimensional profiling and exposure characteristics of SU8C resist were evaluated using electron beam lithography. Experimental results showed the sensitivity of SU8C to be one of the highest and its suitability for large area exposure. A near-unity contrast curve was obtained which was useful for multilevel profiling by varying the postexposure bake time (PEB). An array of Fresnel lenses was demonstrated and designed to demonstrate the suitability of SU8C resist in microscale devices.

Original language	English
Pages (from-to)	732-735
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1368678
State	Published - May 2001
Externally published	Yes
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: 14 Aug 2000 → 17 Aug 2000

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title = "Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography",

abstract = "Three-dimensional profiling and exposure characteristics of SU8C resist were evaluated using electron beam lithography. Experimental results showed the sensitivity of SU8C to be one of the highest and its suitability for large area exposure. A near-unity contrast curve was obtained which was useful for multilevel profiling by varying the postexposure bake time (PEB). An array of Fresnel lenses was demonstrated and designed to demonstrate the suitability of SU8C resist in microscale devices.",

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year = "2001",

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doi = "10.1116/1.1368678",

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AU - Wong, W. H.

AU - Pun, E. Y.B.

PY - 2001/5

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N2 - Three-dimensional profiling and exposure characteristics of SU8C resist were evaluated using electron beam lithography. Experimental results showed the sensitivity of SU8C to be one of the highest and its suitability for large area exposure. A near-unity contrast curve was obtained which was useful for multilevel profiling by varying the postexposure bake time (PEB). An array of Fresnel lenses was demonstrated and designed to demonstrate the suitability of SU8C resist in microscale devices.

AB - Three-dimensional profiling and exposure characteristics of SU8C resist were evaluated using electron beam lithography. Experimental results showed the sensitivity of SU8C to be one of the highest and its suitability for large area exposure. A near-unity contrast curve was obtained which was useful for multilevel profiling by varying the postexposure bake time (PEB). An array of Fresnel lenses was demonstrated and designed to demonstrate the suitability of SU8C resist in microscale devices.

UR - https://www.scopus.com/pages/publications/0035326281

U2 - 10.1116/1.1368678

DO - 10.1116/1.1368678

M3 - 会议文章

AN - SCOPUS:0035326281

SN - 1071-1023

VL - 19

SP - 732

EP - 735

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

Abstract

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