Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang; Songlin Li; Xuming Zou; Johnny Ho; Lei Liao; Xiangheng Xiao; Changzhong Jiang; Weida Hu; Jianlu Wang; Jinchai Li

doi:10.1002/smll.201501260

Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Jingli Wang
, Songlin Li
, Xuming Zou
, Johnny Ho
, Lei Liao^*
, Xiangheng Xiao
, Changzhong Jiang
, Weida Hu
, Jianlu Wang
, Jinchai Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

Abstract

A top-gated MoS₂ transistor with 6 nm thick HfO₂ is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO₂ is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO₂, and multilayered samples are less susceptible than monolayer ones.

Original language	English
Pages (from-to)	5932-5938
Number of pages	7
Journal	Small
Volume	11
Issue number	44
DOIs	https://doi.org/10.1002/smll.201501260
State	Published - 25 Nov 2015
Externally published	Yes

Keywords

MoS transistors
scattering
thickness dependence
top gated, ozone pretreatments, transistors

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10.1002/smll.201501260

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title = "Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation",

abstract = "A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.",

keywords = "MoS transistors, scattering, thickness dependence, top gated, ozone pretreatments, transistors",

author = "Jingli Wang and Songlin Li and Xuming Zou and Johnny Ho and Lei Liao and Xiangheng Xiao and Changzhong Jiang and Weida Hu and Jianlu Wang and Jinchai Li",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

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doi = "10.1002/smll.201501260",

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T1 - Integration of High-k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

AU - Wang, Jingli

AU - Li, Songlin

AU - Zou, Xuming

AU - Ho, Johnny

AU - Liao, Lei

AU - Xiao, Xiangheng

AU - Jiang, Changzhong

AU - Hu, Weida

AU - Wang, Jianlu

AU - Li, Jinchai

PY - 2015/11/25

Y1 - 2015/11/25

N2 - A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

AB - A top-gated MoS2 transistor with 6 nm thick HfO2 is fabricated using an ozone pretreatment. The influence to the top-gated mobility brought about by the deposition of HfO2 is studied statistically, for the first time. The top-gated mobility is suppressed by the deposition of HfO2, and multilayered samples are less susceptible than monolayer ones.

KW - MoS transistors

KW - scattering

KW - thickness dependence

KW - top gated, ozone pretreatments, transistors

UR - https://www.scopus.com/pages/publications/84954517763

U2 - 10.1002/smll.201501260

DO - 10.1002/smll.201501260

M3 - 文章

AN - SCOPUS:84954517763

SN - 1613-6810

VL - 11

SP - 5932

EP - 5938

JO - Small

JF - Small

IS - 44

ER -

Integration of High-k Oxide on MoS₂ by Using Ozone Pretreatment for High-Performance MoS₂ Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

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Keywords

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