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Ion-mediated oxide transistors for neuromorphic electronics: Materials, devices, and perspectives

  • Ruihan Li
  • , Liuqi Cheng
  • , Wanrong Liu
  • , Chenxing Jin
  • , Xiaofang Shi
  • , Pengshan Xie
  • , Qijun Sun*
  • , Mengqiu Long*
  • , Junliang Yang
  • , Johnny C. Ho
  • , Jia Sun*
  • *Corresponding author for this work
  • School of Physics
  • College of Mechanical and Electrical Engineering
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • Chinese Academy of Sciences
  • City University of Hong Kong

Research output: Contribution to journalReview articlepeer-review

Abstract

Constrained by the physical architecture of von Neumann computing with separated storage and computation, neuromorphic computing architectures have been proposed. Ion-mediated oxide synaptic transistors (IOSTs), with their unique biomimetic characteristics, have become a key fundamental component in the construction of neuromorphic computing systems. This review comprehensively explores the biomimetic principles and critical indicators of IOSTs and discusses the unique advantages and recent developments associated with employing various electrolyte materials as the dielectric layers in IOSTs, including ionic liquids, ionic gels, organic polymer electrolytes, and inorganic solid electrolytes. Furthermore, we explore the extensive applications of IOSTs across multiple domains, such as multisensory bionics and neuromorphic computing. This article provides an exhaustive perspective on the research related to IOSTs and their system integration and applications, offering insights into their evolving landscape in neuromorphic electronics.

Original languageEnglish
Article number021318
JournalApplied Physics Reviews
Volume12
Issue number2
DOIs
StatePublished - 1 Jun 2025
Externally publishedYes

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