Abstract
We report a Ti:Er:LiNbO3 strip waveguide with high diffusion-doped surface Er3+ concentration. The waveguide was fabricated with a technological process in sequence of preparation of noncongruent, Li-deficient LiNbO3 substrate by performing Li-poor vapor transport equilibration treatment on a congruent Z-cut LiNbO3 plate, diffusion of 40-nm-thick Er metal film, and fabrication of 8-μm-wide Ti-diffused strip waveguide. The waveguide retains the LiNbO3 phase and shows the waveguiding characteristics similar to the conventional Ti:LiNbO3 waveguide. Secondary ion mass spectrometry study shows that the Er3+ diffusion reservoir was exhausted and the profile is Gaussian with a surface concentration two times larger than that of the conventional Ti:Er:LiNbO3 waveguide. The waveguide shows stable 1547-nm small-signal enhancement under the 1480-nm pumping without serious optical damage observed, and a 5-dB signal enhancement is obtained for the available coupled pump power of only 90 mW. A saturated net gain as much as 5 dB/cm is predicted theoretically.
| Original language | English |
|---|---|
| Article number | 6697810 |
| Pages (from-to) | 524-527 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 26 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 Mar 2014 |
| Externally published | Yes |
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