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Notice of Retraction: Ti:Er:LiNbO3 strip waveguide with high diffusion-doped Er 3+ concentration

  • De Long Zhang
  • , Cong Xian Qiu
  • , Fang Han
  • , Bei Chen
  • , Ping Rang Hua
  • , Dao Yin Yu
  • , Edwin Yue Bun Pun
  • Tianjin University
  • City University of Hong Kong

Research output: Contribution to journalArticlepeer-review

Abstract

We report a Ti:Er:LiNbO3 strip waveguide with high diffusion-doped surface Er3+ concentration. The waveguide was fabricated with a technological process in sequence of preparation of noncongruent, Li-deficient LiNbO3 substrate by performing Li-poor vapor transport equilibration treatment on a congruent Z-cut LiNbO3 plate, diffusion of 40-nm-thick Er metal film, and fabrication of 8-μm-wide Ti-diffused strip waveguide. The waveguide retains the LiNbO3 phase and shows the waveguiding characteristics similar to the conventional Ti:LiNbO3 waveguide. Secondary ion mass spectrometry study shows that the Er3+ diffusion reservoir was exhausted and the profile is Gaussian with a surface concentration two times larger than that of the conventional Ti:Er:LiNbO3 waveguide. The waveguide shows stable 1547-nm small-signal enhancement under the 1480-nm pumping without serious optical damage observed, and a 5-dB signal enhancement is obtained for the available coupled pump power of only 90 mW. A saturated net gain as much as 5 dB/cm is predicted theoretically.

Original languageEnglish
Article number6697810
Pages (from-to)524-527
Number of pages4
JournalIEEE Photonics Technology Letters
Volume26
Issue number5
DOIs
StatePublished - 1 Mar 2014
Externally publishedYes

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