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Post-annealing effect in reactive r.f.-magnetron-sputtered carbon nitride thin films

  • G. L. Chen*
  • , Y. Li
  • , J. Lin
  • , C. H.A. Huan
  • , Y. P. Guo
  • *Corresponding author for this work
  • National University of Singapore

Research output: Contribution to journalArticlepeer-review

Abstract

Thin films of CNx were deposited by reactive r.f.-magnetron sputtering on Si(100) substrates. The effect of annealing temperatures on the structural properties of the films has been studied by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Both FTIR and XPS results show that the population of the carbon nitrogen phase decreases upon annealing in a vacuum. The XPS N 1s peaks indicate the component due to the carbon nitrogen bond to be significantly weaker than the others. An increase of the annealing temperature leads to a more prominent peak corresponding to the C-N phase in the FTIR absorption spectra. These results suggest a substantial decrease of the weakly bound nitrogen and carbon dangling bonds. Electron diffraction measurements reveal the existence of polycrystalline C3N4 structures in films annealed at 700 °C in a vacuum. The XPS studies confirmed that these crystalline phases are composed exclusively of carbon and nitrogen.

Original languageEnglish
Pages (from-to)245-249
Number of pages5
JournalSurface and Interface Analysis
Volume28
Issue number1
DOIs
StatePublished - 1999
Externally publishedYes

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