RbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates by liquid phase epitaxy

L. P. Shi; E. Y.B. Pun; P. S. Chung

doi:10.1002/crat.2170320415

Rb_xK_1-xTiOPO₄ thin films grown on KTiOPO₄ substrates by liquid phase epitaxy

L. P. Shi^*
, E. Y.B. Pun
, P. S. Chung

^*Corresponding author for this work

City University of Hong Kong
National University of Singapore

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The properties of Rb_xK_1-xTiOPO₄ thin films grown on KTiOPO₄ substrates are reported. High quality films were obtained using the flux liquid phase epitaxy method, and optical waveguiding was observed in these epitaxial films. X-ray analysis shows that the epitaxial films are single crystals films. Their cell constants are different from those of the substrates. The epitaxy growth rate and other film properties were compared for films grown on different faces. Two different surface morphologies were observed for films grown on (100) faces. The morphologies on (201) and (201) faces were also different. The quality of films grown on the (201) face was better. The reason for a structure inversion for films grown on the z^- face is discussed.

Original language	English
Pages (from-to)	597-603
Number of pages	7
Journal	Crystal Research and Technology
Volume	32
Issue number	4
DOIs	https://doi.org/10.1002/crat.2170320415
State	Published - 1997
Externally published	Yes

Access to Document

10.1002/crat.2170320415

Cite this

@article{f64241eafe5a4690933d30529fae4535,

title = "RbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates by liquid phase epitaxy",

abstract = "The properties of RbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates are reported. High quality films were obtained using the flux liquid phase epitaxy method, and optical waveguiding was observed in these epitaxial films. X-ray analysis shows that the epitaxial films are single crystals films. Their cell constants are different from those of the substrates. The epitaxy growth rate and other film properties were compared for films grown on different faces. Two different surface morphologies were observed for films grown on (100) faces. The morphologies on (201) and (201) faces were also different. The quality of films grown on the (201) face was better. The reason for a structure inversion for films grown on the z- face is discussed.",

author = "Shi, \{L. P.\} and Pun, \{E. Y.B.\} and Chung, \{P. S.\}",

year = "1997",

doi = "10.1002/crat.2170320415",

language = "英语",

volume = "32",

pages = "597--603",

journal = "Crystal Research and Technology",

issn = "0232-1300",

publisher = "John Wiley \& Sons Inc.",

number = "4",

}

TY - JOUR

T1 - RbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates by liquid phase epitaxy

AU - Shi, L. P.

AU - Pun, E. Y.B.

AU - Chung, P. S.

PY - 1997

Y1 - 1997

N2 - The properties of RbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates are reported. High quality films were obtained using the flux liquid phase epitaxy method, and optical waveguiding was observed in these epitaxial films. X-ray analysis shows that the epitaxial films are single crystals films. Their cell constants are different from those of the substrates. The epitaxy growth rate and other film properties were compared for films grown on different faces. Two different surface morphologies were observed for films grown on (100) faces. The morphologies on (201) and (201) faces were also different. The quality of films grown on the (201) face was better. The reason for a structure inversion for films grown on the z- face is discussed.

AB - The properties of RbxK1-xTiOPO4 thin films grown on KTiOPO4 substrates are reported. High quality films were obtained using the flux liquid phase epitaxy method, and optical waveguiding was observed in these epitaxial films. X-ray analysis shows that the epitaxial films are single crystals films. Their cell constants are different from those of the substrates. The epitaxy growth rate and other film properties were compared for films grown on different faces. Two different surface morphologies were observed for films grown on (100) faces. The morphologies on (201) and (201) faces were also different. The quality of films grown on the (201) face was better. The reason for a structure inversion for films grown on the z- face is discussed.

UR - https://www.scopus.com/pages/publications/0030657163

U2 - 10.1002/crat.2170320415

DO - 10.1002/crat.2170320415

M3 - 文章

AN - SCOPUS:0030657163

SN - 0232-1300

VL - 32

SP - 597

EP - 603

JO - Crystal Research and Technology

JF - Crystal Research and Technology

IS - 4

ER -

Rb_xK_1-xTiOPO₄ thin films grown on KTiOPO₄ substrates by liquid phase epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this