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Recent progress on elemental tellurium and its devices

  • City University of Hong Kong
  • Hunan University
  • Kyushu University

Research output: Contribution to journalReview articlepeer-review

Abstract

The rapid advancement of information technology has heightened interest in complementary devices and circuits. Conventional p-type semiconductors often lack sufficient electrical performance, thus prompting the search for new materials with high hole mobility and long-term stability. Elemental tellurium (Te), featuring a one-dimensional chiral atomic structure, has emerged as a promising candidate due to its narrow bandgap, high hole mobility, and versatility in industrial applications, particularly in electronics and renewable energy. This review highlights recent progress in Te nanostructures and related devices, focusing on synthesis methods, including vapor deposition and hydrothermal synthesis, which produce Te nanowires, nanorods, and other nanostructures. Critical applications in photodetectors, gas sensors, and energy harvesting devices are discussed, with a special emphasis on their role within the internet of things (IoT) framework, a rapidly growing field that is reshaping our technological landscape. The prospects and potential applications of Te-based technologies are also highlighted.

Original languageEnglish
Article number011605
JournalJournal of Semiconductors
Volume46
Issue number1
DOIs
StatePublished - 1 Jan 2025
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • elemental tellurium
  • energy harvesting device
  • field-effect transistor
  • gas sensor
  • photodetector

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