RF sputtered PLZT thin film on Pt/Ti electrode

D. X. Lu; Edwin Y.B. Pun

doi:10.1109/58.658328

RF sputtered PLZT thin film on Pt/Ti electrode

D. X. Lu^*
, Edwin Y.B. Pun

^*Corresponding author for this work

City University of Hong Kong

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

PLZT (7.5/65/35) thin films were deposited by rf magnetron sputtering on single crystal Si substrates using an oxide sintered target with excess PbO. The effects of postannealing and bottom Pt/Ti electrodes on the thin film crystal structures and ferroelectric properties were studied. Film deposited at 200°C or below crystallizes to a perovskite phase after annealing treatment at 550° C or above, and the crystal structure depends on the annealing treatment. The best crystal structures and electronic properties were obtained when the thin films were annealed at 600° C to 650° C for l h in O2. For the Pt/Ti two-layer bottom electrode, the thickness of the Ti layer has a dominant effect. When the Ti layer was too thick or too thin, the PLZT thin film structures consist mainly of pyrochlore phases. However, using an appropriate Ti layer thickness, PLZT thin films having good crystal structures and ferroelectric properties can be obtained, with typical rémanent polarization value of 220 mC/m2 and coercive field strength of 6.5 MV/m.

Original language	English
Pages (from-to)	675-680
Number of pages	6
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	44
Issue number	3
DOIs	https://doi.org/10.1109/58.658328
State	Published - 1997
Externally published	Yes

Access to Document

10.1109/58.658328

Cite this

@article{ebc2825e15ea40a3a57e67e589de099d,

title = "RF sputtered PLZT thin film on Pt/Ti electrode",

abstract = "PLZT (7.5/65/35) thin films were deposited by rf magnetron sputtering on single crystal Si substrates using an oxide sintered target with excess PbO. The effects of postannealing and bottom Pt/Ti electrodes on the thin film crystal structures and ferroelectric properties were studied. Film deposited at 200°C or below crystallizes to a perovskite phase after annealing treatment at 550° C or above, and the crystal structure depends on the annealing treatment. The best crystal structures and electronic properties were obtained when the thin films were annealed at 600° C to 650° C for l h in O2. For the Pt/Ti two-layer bottom electrode, the thickness of the Ti layer has a dominant effect. When the Ti layer was too thick or too thin, the PLZT thin film structures consist mainly of pyrochlore phases. However, using an appropriate Ti layer thickness, PLZT thin films having good crystal structures and ferroelectric properties can be obtained, with typical r{\'e}manent polarization value of 220 mC/m2 and coercive field strength of 6.5 MV/m.",

author = "Lu, \{D. X.\} and Pun, \{Edwin Y.B.\}",

year = "1997",

doi = "10.1109/58.658328",

language = "英语",

volume = "44",

pages = "675--680",

journal = "IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control",

issn = "0885-3010",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - RF sputtered PLZT thin film on Pt/Ti electrode

AU - Lu, D. X.

AU - Pun, Edwin Y.B.

PY - 1997

Y1 - 1997

N2 - PLZT (7.5/65/35) thin films were deposited by rf magnetron sputtering on single crystal Si substrates using an oxide sintered target with excess PbO. The effects of postannealing and bottom Pt/Ti electrodes on the thin film crystal structures and ferroelectric properties were studied. Film deposited at 200°C or below crystallizes to a perovskite phase after annealing treatment at 550° C or above, and the crystal structure depends on the annealing treatment. The best crystal structures and electronic properties were obtained when the thin films were annealed at 600° C to 650° C for l h in O2. For the Pt/Ti two-layer bottom electrode, the thickness of the Ti layer has a dominant effect. When the Ti layer was too thick or too thin, the PLZT thin film structures consist mainly of pyrochlore phases. However, using an appropriate Ti layer thickness, PLZT thin films having good crystal structures and ferroelectric properties can be obtained, with typical rémanent polarization value of 220 mC/m2 and coercive field strength of 6.5 MV/m.

AB - PLZT (7.5/65/35) thin films were deposited by rf magnetron sputtering on single crystal Si substrates using an oxide sintered target with excess PbO. The effects of postannealing and bottom Pt/Ti electrodes on the thin film crystal structures and ferroelectric properties were studied. Film deposited at 200°C or below crystallizes to a perovskite phase after annealing treatment at 550° C or above, and the crystal structure depends on the annealing treatment. The best crystal structures and electronic properties were obtained when the thin films were annealed at 600° C to 650° C for l h in O2. For the Pt/Ti two-layer bottom electrode, the thickness of the Ti layer has a dominant effect. When the Ti layer was too thick or too thin, the PLZT thin film structures consist mainly of pyrochlore phases. However, using an appropriate Ti layer thickness, PLZT thin films having good crystal structures and ferroelectric properties can be obtained, with typical rémanent polarization value of 220 mC/m2 and coercive field strength of 6.5 MV/m.

UR - https://www.scopus.com/pages/publications/0031142966

U2 - 10.1109/58.658328

DO - 10.1109/58.658328

M3 - 文章

AN - SCOPUS:0031142966

SN - 0885-3010

VL - 44

SP - 675

EP - 680

JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

IS - 3

ER -

RF sputtered PLZT thin film on Pt/Ti electrode

Abstract

Access to Document

Other files and links

Fingerprint

Cite this