@article{2e2670ff026141a394a0c58ba7b3fd94,
title = "Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications",
keywords = "InO nanowires, P(VDF-TrFE), ferroelectric memory, field-effect transistors, side-gated",
author = "Meng Su and Zhenyu Yang and Lei Liao and Xuming Zou and Ho, \{Johnny C.\} and Jingli Wang and Jianlu Wang and Weida Hu and Xiangheng Xiao and Changzhong Jiang and Chuansheng Liu and Tailiang Guo",
year = "2016",
month = sep,
day = "1",
doi = "10.1002/advs.201600078",
language = "英语",
volume = "3",
journal = "Advanced Science",
issn = "2198-3844",
publisher = "John Wiley and Sons Inc",
number = "9",
}