Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl; Fengyun Wang; Hugh E. Chung; George R. Kunnen; Senpo Yip; Edward H. Lee; Edwin Y.B. Pun; Gregory B. Raupp; David R. Allee; Johnny C. Ho

doi:10.1109/LED.2013.2250896

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl
, Fengyun Wang
, Hugh E. Chung
, George R. Kunnen
, Senpo Yip
, Edward H. Lee
, Edwin Y.B. Pun
, Gregory B. Raupp
, David R. Allee
, Johnny C. Ho

Arizona State University
City University of Hong Kong

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm² V ^-1 s^-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

Original language	English
Article number	6515612
Pages (from-to)	765-767
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/LED.2013.2250896
State	Published - 2013
Externally published	Yes

Keywords

InAs
low-frequency noise
nanowire (NW) parallel arrays
stability
thin-film transistors (TFTs)

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10.1109/LED.2013.2250896

Cite this

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title = "Stability and low-frequency noise in InAs NW parallel-array thin-film transistors",

abstract = "In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.",

keywords = "InAs, low-frequency noise, nanowire (NW) parallel arrays, stability, thin-film transistors (TFTs)",

author = "Wahl, \{Richard E.\} and Fengyun Wang and Chung, \{Hugh E.\} and Kunnen, \{George R.\} and Senpo Yip and Lee, \{Edward H.\} and Pun, \{Edwin Y.B.\} and Raupp, \{Gregory B.\} and Allee, \{David R.\} and Ho, \{Johnny C.\}",

year = "2013",

doi = "10.1109/LED.2013.2250896",

language = "英语",

volume = "34",

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journal = "IEEE Electron Device Letters",

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T1 - Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

AU - Wahl, Richard E.

AU - Wang, Fengyun

AU - Chung, Hugh E.

AU - Kunnen, George R.

AU - Yip, Senpo

AU - Lee, Edward H.

AU - Pun, Edwin Y.B.

AU - Raupp, Gregory B.

AU - Allee, David R.

AU - Ho, Johnny C.

PY - 2013

Y1 - 2013

N2 - In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

AB - In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

KW - InAs

KW - low-frequency noise

KW - nanowire (NW) parallel arrays

KW - stability

KW - thin-film transistors (TFTs)

UR - https://www.scopus.com/pages/publications/84878274276

U2 - 10.1109/LED.2013.2250896

DO - 10.1109/LED.2013.2250896

M3 - 文章

AN - SCOPUS:84878274276

SN - 0741-3106

VL - 34

SP - 765

EP - 767

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 6515612

ER -

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

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Keywords

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