The fabrication of grating for 1.55 μm InGaAsP DFB laser array by e-beam lithography

E. Yue-Bun; P. W.H. Wong; Yan Xuejin; Peng Ye; Zhou Fan

doi:10.1109/APCC.1999.820579

The fabrication of grating for 1.55 μm InGaAsP DFB laser array by e-beam lithography

E. Yue-Bun
, P. W.H. Wong
, Yan Xuejin^*
, Peng Ye
, Zhou Fan

^*Corresponding author for this work

City University of Hong Kong
CAS - Institute of Semiconductors

Research output: Contribution to conference › Paper › peer-review

Abstract

First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO₃:HBr:H₂O and reactive ion etching using the gas mixture CH₄:H₂:Ar₂. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.

Original language	English
Pages	1545-1547
Number of pages	3
DOIs	https://doi.org/10.1109/APCC.1999.820579
State	Published - 1998
Externally published	Yes
Event	5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999 - Beijing, China Duration: 18 Oct 1999 → 22 Oct 1999

Conference

Conference	5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999
Country/Territory	China
City	Beijing
Period	18/10/99 → 22/10/99

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10.1109/APCC.1999.820579

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title = "The fabrication of grating for 1.55 μm InGaAsP DFB laser array by e-beam lithography",

abstract = "First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO3:HBr:H2O and reactive ion etching using the gas mixture CH4:H2:Ar2. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.",

author = "E. Yue-Bun and Wong, \{P. W.H.\} and Yan Xuejin and Peng Ye and Zhou Fan",

note = "Publisher Copyright: {\textcopyright} 1999 China Inst. Of Communications.; 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999 ; Conference date: 18-10-1999 Through 22-10-1999",

year = "1998",

doi = "10.1109/APCC.1999.820579",

language = "英语",

pages = "1545--1547",

}

TY - CONF

T1 - The fabrication of grating for 1.55 μm InGaAsP DFB laser array by e-beam lithography

AU - Yue-Bun, E.

AU - Wong, P. W.H.

AU - Xuejin, Yan

AU - Ye, Peng

AU - Fan, Zhou

PY - 1998

Y1 - 1998

N2 - First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO3:HBr:H2O and reactive ion etching using the gas mixture CH4:H2:Ar2. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.

AB - First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO3:HBr:H2O and reactive ion etching using the gas mixture CH4:H2:Ar2. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.

UR - https://www.scopus.com/pages/publications/85049254811

U2 - 10.1109/APCC.1999.820579

DO - 10.1109/APCC.1999.820579

M3 - 论文

AN - SCOPUS:85049254811

SP - 1545

EP - 1547

T2 - 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999

Y2 - 18 October 1999 through 22 October 1999

ER -

The fabrication of grating for 1.55 μm InGaAsP DFB laser array by e-beam lithography

Abstract

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