Crystallization-induced stress in phase change random access memory

M. H. Li; J. M. Li; L. P. Shi; H. X. Yang; T. C. Chong; Y. Li

doi:10.1557/proc-1137-ee05-10

Crystallization-induced stress in phase change random access memory

M. H. Li
, J. M. Li
, L. P. Shi
, H. X. Yang
, T. C. Chong
, Y. Li

Agency for Science, Technology and Research, Singapore
National University of Singapore

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge₂Sb₂Te₅ (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films.

源语言	英语
主期刊名	Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments
出版商	Materials Research Society
页	113-118
页数	6
ISBN（印刷版）	9781615673865
DOI	https://doi.org/10.1557/proc-1137-ee05-10
出版状态	已出版 - 2008
已对外发布	是
活动	Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments - Boston, MA, 美国期限: 1 12月 2008 → 5 12月 2008

出版系列

姓名	Materials Research Society Symposium Proceedings
卷	1137
ISSN（印刷版）	0272-9172

会议

会议	Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments
国家/地区	美国
市	Boston, MA
时期	1/12/08 → 5/12/08

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10.1557/proc-1137-ee05-10

其它文件与链接

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引用此

Li, M. H., Li, J. M., Shi, L. P., Yang, H. X., Chong, T. C., & Li, Y. (2008). Crystallization-induced stress in phase change random access memory. 在 Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments (页码 113-118). (Materials Research Society Symposium Proceedings; 卷 1137). Materials Research Society. https://doi.org/10.1557/proc-1137-ee05-10

@inproceedings{865974784f054b0180bd5709b8f53ac5,

title = "Crystallization-induced stress in phase change random access memory",

abstract = "Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge2Sb2Te5 (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films.",

author = "Li, \{M. H.\} and Li, \{J. M.\} and Shi, \{L. P.\} and Yang, \{H. X.\} and Chong, \{T. C.\} and Y. Li",

year = "2008",

doi = "10.1557/proc-1137-ee05-10",

language = "英语",

isbn = "9781615673865",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "113--118",

booktitle = "Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments",

note = "Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments ; Conference date: 01-12-2008 Through 05-12-2008",

}

Li, MH, Li, JM, Shi, LP, Yang, HX, Chong, TC & Li, Y 2008, Crystallization-induced stress in phase change random access memory. 在 Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments. Materials Research Society Symposium Proceedings, 卷 1137, Materials Research Society, 页码 113-118, Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments, Boston, MA, 美国, 1/12/08. https://doi.org/10.1557/proc-1137-ee05-10

Crystallization-induced stress in phase change random access memory. / Li, M. H.; Li, J. M.; Shi, L. P. 等.
Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments. Materials Research Society, 2008. 页码 113-118 (Materials Research Society Symposium Proceedings; 卷 1137).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Crystallization-induced stress in phase change random access memory

AU - Li, M. H.

AU - Li, J. M.

AU - Shi, L. P.

AU - Yang, H. X.

AU - Chong, T. C.

AU - Li, Y.

PY - 2008

Y1 - 2008

N2 - Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge2Sb2Te5 (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films.

AB - Switched phase change material in Phase Change Random Access Memory (PCRAM) is confined within a solid surrounding. As a result of mechanical properties and micro structure differences between the crystalline and the amorphous phases, strains and stresses are generated and may degrade the performance of PCRAM devices. This paper investigated the crystallization-induced stress in phase change Ge2Sb2Te5 (GST) nano film. The electric-thermal and thermo-mechanical simulation results show that the increases of both of the Young's modulus and Coefficient of Thermal Expansion (CTE) are responsible for the stress generation upon crystallization. The XRD studies correlate the strains and stresses with the lattice deformation in crystalline GST films.

UR - https://www.scopus.com/pages/publications/70450119927

U2 - 10.1557/proc-1137-ee05-10

DO - 10.1557/proc-1137-ee05-10

M3 - 会议稿件

AN - SCOPUS:70450119927

SN - 9781615673865

T3 - Materials Research Society Symposium Proceedings

SP - 113

EP - 118

BT - Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments

PB - Materials Research Society

T2 - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments

Y2 - 1 December 2008 through 5 December 2008

ER -

Li MH, Li JM, Shi LP, Yang HX, Chong TC, Li Y. Crystallization-induced stress in phase change random access memory. 在 Materials Research Society Symposium Proceedings - Nano- and Microscale Materials-Mechanical Properties and Behavior under Extreme Environments. Materials Research Society. 2008. 页码 113-118. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-1137-ee05-10

Crystallization-induced stress in phase change random access memory

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