Effects of electron concentration on the optical absorption edge of InN

J. Wu; W. Walukiewicz; S. X. Li; R. Armitage; J. C. Ho; E. R. Weber; E. E. Haller; Hai Lu; William J. Schaff; A. Barcz; R. Jakiela

doi:10.1063/1.1704853

Effects of electron concentration on the optical absorption edge of InN

J. Wu^*
, W. Walukiewicz
, S. X. Li
, R. Armitage
, J. C. Ho
, E. R. Weber
, E. E. Haller
, Hai Lu
, William J. Schaff
, A. Barcz
, R. Jakiela

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

236 引用（Scopus）

摘要

The effects of free electron concentration were analyzed which ranged form 10 ¹⁷ to 10 ²⁰ cm ^-3. The optical absorption, Hall effect and ion mass spectrometry were used for performing the investigation. The intrinsic band gap of InN of about 0.7 to 1.7 eV was observed for optical absorption edge. The Burstein-Moss shift was used to account electron concentration dependence of optical absorption edge energy. The O and H impurities were not able to fully account for free electron concentration in films which was shown by secondary ion mass spectrometry.

源语言	英语
页（从-至）	2805-2807
页数	3
期刊	Applied Physics Letters
卷	84
期	15
DOI	https://doi.org/10.1063/1.1704853
出版状态	已出版 - 12 4月 2004
已对外发布	是

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title = "Effects of electron concentration on the optical absorption edge of InN",

abstract = "The effects of free electron concentration were analyzed which ranged form 10 17 to 10 20 cm -3. The optical absorption, Hall effect and ion mass spectrometry were used for performing the investigation. The intrinsic band gap of InN of about 0.7 to 1.7 eV was observed for optical absorption edge. The Burstein-Moss shift was used to account electron concentration dependence of optical absorption edge energy. The O and H impurities were not able to fully account for free electron concentration in films which was shown by secondary ion mass spectrometry.",

author = "J. Wu and W. Walukiewicz and Li, \{S. X.\} and R. Armitage and Ho, \{J. C.\} and Weber, \{E. R.\} and Haller, \{E. E.\} and Hai Lu and Schaff, \{William J.\} and A. Barcz and R. Jakiela",

year = "2004",

month = apr,

day = "12",

doi = "10.1063/1.1704853",

language = "英语",

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TY - JOUR

T1 - Effects of electron concentration on the optical absorption edge of InN

AU - Wu, J.

AU - Walukiewicz, W.

AU - Li, S. X.

AU - Armitage, R.

AU - Ho, J. C.

AU - Weber, E. R.

AU - Haller, E. E.

AU - Lu, Hai

AU - Schaff, William J.

AU - Barcz, A.

AU - Jakiela, R.

PY - 2004/4/12

Y1 - 2004/4/12

N2 - The effects of free electron concentration were analyzed which ranged form 10 17 to 10 20 cm -3. The optical absorption, Hall effect and ion mass spectrometry were used for performing the investigation. The intrinsic band gap of InN of about 0.7 to 1.7 eV was observed for optical absorption edge. The Burstein-Moss shift was used to account electron concentration dependence of optical absorption edge energy. The O and H impurities were not able to fully account for free electron concentration in films which was shown by secondary ion mass spectrometry.

AB - The effects of free electron concentration were analyzed which ranged form 10 17 to 10 20 cm -3. The optical absorption, Hall effect and ion mass spectrometry were used for performing the investigation. The intrinsic band gap of InN of about 0.7 to 1.7 eV was observed for optical absorption edge. The Burstein-Moss shift was used to account electron concentration dependence of optical absorption edge energy. The O and H impurities were not able to fully account for free electron concentration in films which was shown by secondary ion mass spectrometry.

UR - https://www.scopus.com/pages/publications/2342565119

U2 - 10.1063/1.1704853

DO - 10.1063/1.1704853

M3 - 文章

AN - SCOPUS:2342565119

SN - 0003-6951

VL - 84

SP - 2805

EP - 2807

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Effects of electron concentration on the optical absorption edge of InN

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