@inproceedings{e42ccd42a71548289b8d74c3b22cbc94,
title = "Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield",
abstract = "Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO 2/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.",
keywords = "GaAs nanowires, Ni catalysts, solid-source chemical vapor deposition",
author = "Ning Han and Fengyun Wang and Hui, \{Alvin T.\} and Hou, \{Jared J.\} and Guangcun Shan and Fei Xiu and Hung, \{Tak Fu\} and Ho, \{Johnny C.\}",
year = "2011",
doi = "10.1109/ASQED.2011.6111746",
language = "英语",
isbn = "9781457701443",
series = "Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011",
pages = "207--210",
booktitle = "Proceedings of the 3rd Asia Symposium on Quality Electronic Design, ASQED 2011",
note = "3rd Asia Symposium on Quality Electronic Design, ASQED 2011 ; Conference date: 19-07-2011 Through 20-07-2011",
}