Erbium doping in silicon by thermal indiffusion

Emile Man Wah Wong; Hongwei Liu; Shi Qing Man; Edwin Yue Bun Pun; Po Sheun Chung

doi:10.1143/jjap.37.3669

Erbium doping in silicon by thermal indiffusion

Emile Man Wah Wong^*
, Hongwei Liu
, Shi Qing Man
, Edwin Yue Bun Pun
, Po Sheun Chung

^*此作品的通讯作者

City University of Hong Kong

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb₂O₃) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

源语言	英语
页（从-至）	3669-3672
页数	4
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	37
期	6 SUPPL. B
DOI	https://doi.org/10.1143/jjap.37.3669
出版状态	已出版 - 6月 1998
已对外发布	是

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title = "Erbium doping in silicon by thermal indiffusion",

abstract = "A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.",

keywords = "Erbium, Photoluminescence, Rare-earth ion, Silicon, Thermal indiffusion",

author = "Wong, \{Emile Man Wah\} and Hongwei Liu and Man, \{Shi Qing\} and Pun, \{Edwin Yue Bun\} and Chung, \{Po Sheun\}",

year = "1998",

month = jun,

doi = "10.1143/jjap.37.3669",

language = "英语",

volume = "37",

pages = "3669--3672",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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T1 - Erbium doping in silicon by thermal indiffusion

AU - Wong, Emile Man Wah

AU - Liu, Hongwei

AU - Man, Shi Qing

AU - Pun, Edwin Yue Bun

AU - Chung, Po Sheun

PY - 1998/6

Y1 - 1998/6

N2 - A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

AB - A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.

KW - Erbium

KW - Photoluminescence

KW - Rare-earth ion

KW - Silicon

KW - Thermal indiffusion

UR - https://www.scopus.com/pages/publications/0032093407

U2 - 10.1143/jjap.37.3669

DO - 10.1143/jjap.37.3669

M3 - 文章

AN - SCOPUS:0032093407

SN - 0021-4922

VL - 37

SP - 3669

EP - 3672

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 6 SUPPL. B

ER -

Erbium doping in silicon by thermal indiffusion

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