Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

W. H. Wong; E. Y.B. Pun

doi:10.1116/1.1368678

Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

W. H. Wong^*
, E. Y.B. Pun

^*此作品的通讯作者

City University of Hong Kong

科研成果: 期刊稿件 › 会议文章 › 同行评审

37 引用（Scopus）

摘要

Three-dimensional profiling and exposure characteristics of SU8C resist were evaluated using electron beam lithography. Experimental results showed the sensitivity of SU8C to be one of the highest and its suitability for large area exposure. A near-unity contrast curve was obtained which was useful for multilevel profiling by varying the postexposure bake time (PEB). An array of Fresnel lenses was demonstrated and designed to demonstrate the suitability of SU8C resist in microscale devices.

源语言	英语
页（从-至）	732-735
页数	4
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	19
期	3
DOI	https://doi.org/10.1116/1.1368678
出版状态	已出版 - 5月 2001
已对外发布	是
活动	13th International Vaccum Microelectronics Conference - Guangzhou, 中国期限: 14 8月 2000 → 17 8月 2000

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@article{6fc097d74ded4f65ac0662f40cf06db4,

title = "Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography",

abstract = "Three-dimensional profiling and exposure characteristics of SU8C resist were evaluated using electron beam lithography. Experimental results showed the sensitivity of SU8C to be one of the highest and its suitability for large area exposure. A near-unity contrast curve was obtained which was useful for multilevel profiling by varying the postexposure bake time (PEB). An array of Fresnel lenses was demonstrated and designed to demonstrate the suitability of SU8C resist in microscale devices.",

author = "Wong, \{W. H.\} and Pun, \{E. Y.B.\}",

year = "2001",

month = may,

doi = "10.1116/1.1368678",

language = "英语",

volume = "19",

pages = "732--735",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "13th International Vaccum Microelectronics Conference ; Conference date: 14-08-2000 Through 17-08-2000",

}

TY - JOUR

T1 - Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

AU - Wong, W. H.

AU - Pun, E. Y.B.

PY - 2001/5

Y1 - 2001/5

N2 - Three-dimensional profiling and exposure characteristics of SU8C resist were evaluated using electron beam lithography. Experimental results showed the sensitivity of SU8C to be one of the highest and its suitability for large area exposure. A near-unity contrast curve was obtained which was useful for multilevel profiling by varying the postexposure bake time (PEB). An array of Fresnel lenses was demonstrated and designed to demonstrate the suitability of SU8C resist in microscale devices.

AB - Three-dimensional profiling and exposure characteristics of SU8C resist were evaluated using electron beam lithography. Experimental results showed the sensitivity of SU8C to be one of the highest and its suitability for large area exposure. A near-unity contrast curve was obtained which was useful for multilevel profiling by varying the postexposure bake time (PEB). An array of Fresnel lenses was demonstrated and designed to demonstrate the suitability of SU8C resist in microscale devices.

UR - https://www.scopus.com/pages/publications/0035326281

U2 - 10.1116/1.1368678

DO - 10.1116/1.1368678

M3 - 会议文章

AN - SCOPUS:0035326281

SN - 1071-1023

VL - 19

SP - 732

EP - 735

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

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