摘要
Tailoring the elemental doping of inorganic nanowires remains an important challenge due to complex dopant incorporation pathways. Here we report that the face-selectivity of tungstate ions controls growth direction and dopant incorporation of hydrothermal zinc oxide nanowires. The introduction of tungstate ions on nanowire surface during synthesis unexpectedly enhances nucleation at sidewall { 10 1 ¯ 0 } planes, while dopant incorporation occurs only on (0001) planes. This conflicting face-selective behavior leads to inhomogeneous dopant distribution. Density functional theory calculations reveal that the face-selective behavior can be interpreted in terms of the effect of coordination structure of the tungstate ions on each zinc oxide crystal plane. In addition, we demonstrate a rational strategy to control the morphology and the elemental doping of tungsten-doped zinc oxide nanowires.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 58 |
| 期刊 | Communications Materials |
| 卷 | 1 |
| 期 | 1 |
| DOI | |
| 出版状态 | 已出版 - 12月 2020 |
| 已对外发布 | 是 |
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