Floating gate memory-based monolayer MoS₂ transistor with metal nanocrystals embedded in the gate dielectrics

Charge trapping layers are formed from different metallic nanocrystals in MoS₂-based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 10⁵ and a long retention time of 10 years.