Formation of surface structures during heteroepitaxial thin film growth on prepatterned substrates

P. Liu; C. Lu; Y. W. Zhang

doi:10.1103/PhysRevB.76.085336

Formation of surface structures during heteroepitaxial thin film growth on prepatterned substrates

P. Liu
, C. Lu
, Y. W. Zhang^*

^*此作品的通讯作者

Agency for Science, Technology and Research, Singapore
National University of Singapore

科研成果: 期刊稿件 › 文章 › 同行评审

17 引用（Scopus）

摘要

Guided quantum dot self-assembly grown heteroepitaxially on a substrate surface prepatterned with cosinelike humps is studied by computer simulation. The SiGe Si material system is used as a model system, in which the strain energy, surface energy, wetting effect, surface anisotropy, and elastic anisotropy are taken into account. The simulation results reveal the formation of surface structures which may potentially be of practical applications.

源语言	英语
文章编号	085336
期刊	Physical Review B - Condensed Matter and Materials Physics
卷	76
期	8
DOI	https://doi.org/10.1103/PhysRevB.76.085336
出版状态	已出版 - 22 8月 2007
已对外发布	是

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abstract = "Guided quantum dot self-assembly grown heteroepitaxially on a substrate surface prepatterned with cosinelike humps is studied by computer simulation. The SiGe Si material system is used as a model system, in which the strain energy, surface energy, wetting effect, surface anisotropy, and elastic anisotropy are taken into account. The simulation results reveal the formation of surface structures which may potentially be of practical applications.",

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AU - Lu, C.

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N2 - Guided quantum dot self-assembly grown heteroepitaxially on a substrate surface prepatterned with cosinelike humps is studied by computer simulation. The SiGe Si material system is used as a model system, in which the strain energy, surface energy, wetting effect, surface anisotropy, and elastic anisotropy are taken into account. The simulation results reveal the formation of surface structures which may potentially be of practical applications.

AB - Guided quantum dot self-assembly grown heteroepitaxially on a substrate surface prepatterned with cosinelike humps is studied by computer simulation. The SiGe Si material system is used as a model system, in which the strain energy, surface energy, wetting effect, surface anisotropy, and elastic anisotropy are taken into account. The simulation results reveal the formation of surface structures which may potentially be of practical applications.

UR - https://www.scopus.com/pages/publications/34548289954

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DO - 10.1103/PhysRevB.76.085336

M3 - 文章

AN - SCOPUS:34548289954

SN - 1098-0121

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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Formation of surface structures during heteroepitaxial thin film growth on prepatterned substrates

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