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Ion-mediated oxide transistors for neuromorphic electronics: Materials, devices, and perspectives

  • Ruihan Li
  • , Liuqi Cheng
  • , Wanrong Liu
  • , Chenxing Jin
  • , Xiaofang Shi
  • , Pengshan Xie
  • , Qijun Sun*
  • , Mengqiu Long*
  • , Junliang Yang
  • , Johnny C. Ho
  • , Jia Sun*
  • *此作品的通讯作者
  • School of Physics
  • College of Mechanical and Electrical Engineering
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • Chinese Academy of Sciences
  • City University of Hong Kong

科研成果: 期刊稿件文献综述同行评审

摘要

Constrained by the physical architecture of von Neumann computing with separated storage and computation, neuromorphic computing architectures have been proposed. Ion-mediated oxide synaptic transistors (IOSTs), with their unique biomimetic characteristics, have become a key fundamental component in the construction of neuromorphic computing systems. This review comprehensively explores the biomimetic principles and critical indicators of IOSTs and discusses the unique advantages and recent developments associated with employing various electrolyte materials as the dielectric layers in IOSTs, including ionic liquids, ionic gels, organic polymer electrolytes, and inorganic solid electrolytes. Furthermore, we explore the extensive applications of IOSTs across multiple domains, such as multisensory bionics and neuromorphic computing. This article provides an exhaustive perspective on the research related to IOSTs and their system integration and applications, offering insights into their evolving landscape in neuromorphic electronics.

源语言英语
文章编号021318
期刊Applied Physics Reviews
12
2
DOI
出版状态已出版 - 1 6月 2025
已对外发布

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