跳到主要导航 跳到搜索 跳到主要内容

Mechanism of non-catalytic chemical vapor deposition growth of all-inorganic CsPbX3(X = Br, Cl) nanowires

  • Mohammad Kamal Hossain
  • , Roberto dos Reis
  • , Wayesh Qarony
  • , Yuen Hong Tsang
  • , Johnny C. Ho
  • , Kin Man Yu*
  • *此作品的通讯作者
  • City University of Hong Kong
  • Comilla University
  • Northwestern University
  • University of California at Davis
  • Hong Kong Polytechnic University

科研成果: 期刊稿件文章同行评审

摘要

The growth of high-quality nanostructures using chemical vapor deposition (CVD) normally requires metal catalysts, which when incorporated in the nanostructures may severely affect their properties. Here, we report on the non-catalytic CVD growth of all-inorganic CsPbX3(X = Br, Cl) perovskite nanowires (NWs) with an emphasis on understanding the growth mechanismviadetailed electron microscopy and spectroscopic studies at different stages of the growth. We show that the chemical vapors initiate the nucleation and growth of halide nanoparticles, followed by structural transformations through axial elongation into nano-capsules and dumbbells, and eventually these dumbbells meet and form complete NWs. This growth mechanism is independent of the substrate crystallinity and detailed spectroscopic measurements demonstrate that nanoscale features at different growth stages have similar material properties as the final NWs. We believe that this self-assembly mechanism can be extended to understand the evolution of nanostructures in other semiconductor materials and to tune their characteristics to enhance their functionalities for novel optoelectronic devices.

源语言英语
页(从-至)3229-3238
页数10
期刊Journal of Materials Chemistry C
9
9
DOI
出版状态已出版 - 7 3月 2021
已对外发布

指纹

探究 'Mechanism of non-catalytic chemical vapor deposition growth of all-inorganic CsPbX3(X = Br, Cl) nanowires' 的科研主题。它们共同构成独一无二的指纹。

引用此