Multifunctional anti-ambipolar electronics enabled by mixed-dimensional 1D GaAsSb/2D MoS₂ heterotransistors

The incapability of effective multifunctional logic operations for most reported heterostructure electronic devices has impeded further simplification of the prevailing complex integrated circuit design. Here, an anti-ambipolar transistor is successfully demonstrated based on a mixed-dimensional GaAsSb nanowire/MoS₂ nanoflake heterojunction. Due to the strong interfacial coupling and band-structure alignment properties, the prominent anti-ambipolar transfer characteristics with the flipping of transconductance are readily achieved, showing a high peak-to-valley ratio of over 10³ on either side of the peak current. The anti-ambipolar transistor is then leveraged to perform the multivalued inverter with low supply voltage. Furthermore, the frequency doubling circuits are explored by exploiting the flipping of transconductance of the heterotransistor. The output voltage of the frequency multiplier oscillates at a 2-fold frequency in response to the input analog circuit signal. The mixed-dimensional anti-ambipolar transistors developed in this study are a step toward next-generation multifunctional integrated circuits and telecommunication technologies.