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Optical Properties and Nanocavity Response of CsPbCl3Nanowires: Implications for Light-Emitting Devices

  • Mohammad Kamal Hossain*
  • , Szymon J. Zelewski
  • , Robert Kudrawiec
  • , Marcin Syperek
  • , Roberto dos Reis
  • , Yuen Hong Tsang
  • , Johnny C. Ho
  • , Kin Man Yu*
  • *此作品的通讯作者
  • Comilla University
  • City University of Hong Kong
  • Wrocław University of Science and Technology
  • Northwestern University
  • Hong Kong Polytechnic University
  • National Sun Yat-sen University

科研成果: 期刊稿件文章同行评审

摘要

Advanced photochemical stability, excellent lasing response, and multifold higher nonlinear optical magnitude of all-inorganic CsPbX3 (X = Cl, Br, and I) perovskites made them superior to their organic–inorganic hybrid halide counterparts and other conventional semiconducting materials. Herein, in addition to basic material properties, various aspects of the photoluminescence (PL) behaviors along with the highest ever Q-factor nanocavity response of CsPbX3 (X = Cl) perovskite nanowires (NWs) are reported. The high-quality, single-crystalline CsPbCl3 NWs were grown by the noncatalytic chemical vapor deposition (NC–CVD) approach. Strong violet-blue (∼415 nm) PL emission, excellent response to multiphoton absorption (MPA), and harmonic generation suggest that these NWs are suitable for light manipulation and detection-related miniaturized device applications. Temperature- and power-dependent PL measurements reveal that the PL emissions from the CsPbCl3 NWs originate from excitonic transitions. Further, excitation fluence-dependent PL measurements on typical CsPbCl3 NW demonstrate excellent single-mode lasing at PTh ∼ 130 μJ/cm2 with a nanocavity response quality factor, Q ∼ 4500, higher than most reported values for similar materials and nanostructures. We believe that, in addition to device miniaturization, these findings will surely advance and promote the one- and multiphoton absorption (OPA and MPA)-related optoelectronic applications of CsPbX3 perovskites. Moreover, the insights of the photophysical transitions revealed here for large bandgap (Eg ∼ 2.99 eV) CsPbCl3 NWs may also facilitate the understanding of the photophysics of other wide bandgap semiconductors.

源语言英语
页(从-至)23933-23944
页数12
期刊ACS Applied Nano Materials
8
50
DOI
出版状态已出版 - 19 12月 2025
已对外发布

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