Optimized lift-off technique for deposition of high-quality Ti strip on LiNbO3 crystal

De Long Zhang; W. H. Wong; E. Y.B. Pun

Optimized lift-off technique for deposition of high-quality Ti strip on LiNbO₃ crystal

De Long Zhang^*
, W. H. Wong
, E. Y.B. Pun

^*此作品的通讯作者

City University of Hong Kong
Tianjin University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

A lift-off technique for deposition of Ti strips onto the surface of both Z-and X-cut LiNbO₃ crystals was studied. Several pretreatments on the Ti-sputtered substrate were compared before carrying out the lift-off procedure to optimize the procedure. Preserving the Ti-sputtered substrate in a container at a temperature of 50-90 °C for a duration of several hours was found to be the best pretreatment. The pretreatment was found to strengthen the adhesion of the Ti metal onto the crystal surface to some extent and thereby allowed the obtaining of high quality Ti strips.

源语言	英语
页（从-至）	283-285
页数	3
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	22
期	1
出版状态	已出版 - 1月 2004
已对外发布	是

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abstract = "A lift-off technique for deposition of Ti strips onto the surface of both Z-and X-cut LiNbO3 crystals was studied. Several pretreatments on the Ti-sputtered substrate were compared before carrying out the lift-off procedure to optimize the procedure. Preserving the Ti-sputtered substrate in a container at a temperature of 50-90 °C for a duration of several hours was found to be the best pretreatment. The pretreatment was found to strengthen the adhesion of the Ti metal onto the crystal surface to some extent and thereby allowed the obtaining of high quality Ti strips.",

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N2 - A lift-off technique for deposition of Ti strips onto the surface of both Z-and X-cut LiNbO3 crystals was studied. Several pretreatments on the Ti-sputtered substrate were compared before carrying out the lift-off procedure to optimize the procedure. Preserving the Ti-sputtered substrate in a container at a temperature of 50-90 °C for a duration of several hours was found to be the best pretreatment. The pretreatment was found to strengthen the adhesion of the Ti metal onto the crystal surface to some extent and thereby allowed the obtaining of high quality Ti strips.

AB - A lift-off technique for deposition of Ti strips onto the surface of both Z-and X-cut LiNbO3 crystals was studied. Several pretreatments on the Ti-sputtered substrate were compared before carrying out the lift-off procedure to optimize the procedure. Preserving the Ti-sputtered substrate in a container at a temperature of 50-90 °C for a duration of several hours was found to be the best pretreatment. The pretreatment was found to strengthen the adhesion of the Ti metal onto the crystal surface to some extent and thereby allowed the obtaining of high quality Ti strips.

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M3 - 文章

AN - SCOPUS:1642314267

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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Optimized lift-off technique for deposition of high-quality Ti strip on LiNbO3 crystal

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Optimized lift-off technique for deposition of high-quality Ti strip on LiNbO₃ crystal