Phosphine oxide monolayers on SiO₂ surfaces

(Figure Presented) Getting a grip: H-bond formation is shown to be the main mode of interaction for monolayer formation of phosphine oxides on SiO ₂ substrates (see images), with covalent reaction involved to a lesser extent. In contrast to the situation with the more widely studied polar phosphonic acids, formation of these monolayers is self-limiting. The results may have important implications for many applications based on phosphine oxide monolayers.