TY - JOUR
T1 - Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance
AU - Zhang, Yuxuan
AU - Meng, You
AU - Wang, Liqiang
AU - Lan, Changyong
AU - Quan, Quan
AU - Wang, Wei
AU - Lai, Zhengxun
AU - Wang, Weijun
AU - Li, Yezhan
AU - Yin, Di
AU - Li, Dengji
AU - Xie, Pengshan
AU - Chen, Dong
AU - Yang, Zhe
AU - Yip, Sen Po
AU - Lu, Yang
AU - Wong, Chun Yuen
AU - Ho, Johnny C.
N1 - Publisher Copyright:
© 2024, The Author(s).
PY - 2024/12
Y1 - 2024/12
N2 - High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.
AB - High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.
UR - https://www.scopus.com/pages/publications/85183029965
U2 - 10.1038/s41467-024-44970-4
DO - 10.1038/s41467-024-44970-4
M3 - 文章
C2 - 38272917
AN - SCOPUS:85183029965
SN - 2041-1723
VL - 15
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 728
ER -