PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

D. X. Lu; E. Y.B. Pun; Y. L. Zhang; E. M.W. Wong; P. S. Chung; L. B. Huang; Z. Y. Lee

PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

D. X. Lu^*
, E. Y.B. Pun
, Y. L. Zhang
, E. M.W. Wong
, P. S. Chung
, L. B. Huang
, Z. Y. Lee

^*此作品的通讯作者

City University of Hong Kong

科研成果: 会议稿件 › 论文 › 同行评审

3 引用（Scopus）

摘要

We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500 °C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick thin film annealed at 650 °C for 60 min has a remnant polarization Pr of 13.2 μC/cm² and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 μm-thick thin film annealed at 600 °C for 60 min has a remnant polarization Pr of 16.3 μC/cm² and a coercive fields Ec of 117.6 kV/cm.

源语言	英语
页	451-454
页数	4
出版状态	已出版 - 1996
已对外发布	是
活动	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA 期限: 18 8月 1996 → 21 8月 1996

会议

会议	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
市	East Brunswick, NJ, USA
时期	18/08/96 → 21/08/96

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@conference{3931b12dd5d2460aba8e2607597f1838,

title = "PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering",

abstract = "We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500 °C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick thin film annealed at 650 °C for 60 min has a remnant polarization Pr of 13.2 μC/cm2 and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 μm-thick thin film annealed at 600 °C for 60 min has a remnant polarization Pr of 16.3 μC/cm2 and a coercive fields Ec of 117.6 kV/cm.",

author = "Lu, \{D. X.\} and Pun, \{E. Y.B.\} and Zhang, \{Y. L.\} and Wong, \{E. M.W.\} and Chung, \{P. S.\} and Huang, \{L. B.\} and Lee, \{Z. Y.\}",

year = "1996",

language = "英语",

pages = "451--454",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

TY - CONF

T1 - PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

AU - Lu, D. X.

AU - Pun, E. Y.B.

AU - Zhang, Y. L.

AU - Wong, E. M.W.

AU - Chung, P. S.

AU - Huang, L. B.

AU - Lee, Z. Y.

PY - 1996

Y1 - 1996

N2 - We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500 °C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick thin film annealed at 650 °C for 60 min has a remnant polarization Pr of 13.2 μC/cm2 and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 μm-thick thin film annealed at 600 °C for 60 min has a remnant polarization Pr of 16.3 μC/cm2 and a coercive fields Ec of 117.6 kV/cm.

AB - We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 μm-thick thin films were completely crystallized into the perovskite phase at 500 °C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 μm-thick thin film annealed at 650 °C for 60 min has a remnant polarization Pr of 13.2 μC/cm2 and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz. The 0.47 μm-thick thin film annealed at 600 °C for 60 min has a remnant polarization Pr of 16.3 μC/cm2 and a coercive fields Ec of 117.6 kV/cm.

UR - https://www.scopus.com/pages/publications/0030358607

M3 - 论文

AN - SCOPUS:0030358607

SP - 451

EP - 454

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering

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