Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

Meng Su; Zhenyu Yang; Lei Liao; Xuming Zou; Johnny C. Ho; Jingli Wang; Jianlu Wang; Weida Hu; Xiangheng Xiao; Changzhong Jiang; Chuansheng Liu; Tailiang Guo

doi:10.1002/advs.201600078

Side-Gated In₂O₃ Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

Meng Su
, Zhenyu Yang
, Lei Liao^*
, Xuming Zou
, Johnny C. Ho
, Jingli Wang
, Jianlu Wang
, Weida Hu
, Xiangheng Xiao
, Changzhong Jiang
, Chuansheng Liu
, Tailiang Guo

^*此作品的通讯作者

Wuhan University
City University of Hong Kong
CAS - Shanghai Institute of Technical Physics
Fuzhou University

科研成果: 期刊稿件 › 文章 › 同行评审

46 引用（Scopus）

源语言	英语
文章编号	1600078
期刊	Advanced Science
卷	3
期	9
DOI	https://doi.org/10.1002/advs.201600078
出版状态	已出版 - 1 9月 2016
已对外发布	是

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10.1002/advs.201600078

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引用此

@article{2e2670ff026141a394a0c58ba7b3fd94,

title = "Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications",

keywords = "InO nanowires, P(VDF-TrFE), ferroelectric memory, field-effect transistors, side-gated",

author = "Meng Su and Zhenyu Yang and Lei Liao and Xuming Zou and Ho, \{Johnny C.\} and Jingli Wang and Jianlu Wang and Weida Hu and Xiangheng Xiao and Changzhong Jiang and Chuansheng Liu and Tailiang Guo",

year = "2016",

month = sep,

day = "1",

doi = "10.1002/advs.201600078",

language = "英语",

volume = "3",

journal = "Advanced Science",

issn = "2198-3844",

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TY - JOUR

T1 - Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

AU - Su, Meng

AU - Yang, Zhenyu

AU - Liao, Lei

AU - Zou, Xuming

AU - Ho, Johnny C.

AU - Wang, Jingli

AU - Wang, Jianlu

AU - Hu, Weida

AU - Xiao, Xiangheng

AU - Jiang, Changzhong

AU - Liu, Chuansheng

AU - Guo, Tailiang

PY - 2016/9/1

Y1 - 2016/9/1

KW - InO nanowires

KW - P(VDF-TrFE)

KW - ferroelectric memory

KW - field-effect transistors

KW - side-gated

UR - https://www.scopus.com/pages/publications/84985972763

U2 - 10.1002/advs.201600078

DO - 10.1002/advs.201600078

M3 - 文章

AN - SCOPUS:84985972763

SN - 2198-3844

VL - 3

JO - Advanced Science

JF - Advanced Science

IS - 9

M1 - 1600078

ER -