Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl; Fengyun Wang; Hugh E. Chung; George R. Kunnen; Senpo Yip; Edward H. Lee; Edwin Y.B. Pun; Gregory B. Raupp; David R. Allee; Johnny C. Ho

doi:10.1109/LED.2013.2250896

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

Richard E. Wahl
, Fengyun Wang
, Hugh E. Chung
, George R. Kunnen
, Senpo Yip
, Edward H. Lee
, Edwin Y.B. Pun
, Gregory B. Raupp
, David R. Allee
, Johnny C. Ho

Arizona State University
City University of Hong Kong

科研成果: 期刊稿件 › 文章 › 同行评审

9 引用（Scopus）

摘要

In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm² V ^-1 s^-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

源语言	英语
期刊论文编号	6515612
页（从-至）	765-767
页数	3
期刊	IEEE Electron Device Letters
卷	34
期	6
DOI	https://doi.org/10.1109/LED.2013.2250896
出版状态	已出版 - 2013
已对外发布	是

访问文件

10.1109/LED.2013.2250896

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{ee230122794c490291908fd93f3ba7f4,

title = "Stability and low-frequency noise in InAs NW parallel-array thin-film transistors",

abstract = "In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.",

keywords = "InAs, low-frequency noise, nanowire (NW) parallel arrays, stability, thin-film transistors (TFTs)",

author = "Wahl, \{Richard E.\} and Fengyun Wang and Chung, \{Hugh E.\} and Kunnen, \{George R.\} and Senpo Yip and Lee, \{Edward H.\} and Pun, \{Edwin Y.B.\} and Raupp, \{Gregory B.\} and Allee, \{David R.\} and Ho, \{Johnny C.\}",

year = "2013",

doi = "10.1109/LED.2013.2250896",

language = "英语",

volume = "34",

pages = "765--767",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

AU - Wahl, Richard E.

AU - Wang, Fengyun

AU - Chung, Hugh E.

AU - Kunnen, George R.

AU - Yip, Senpo

AU - Lee, Edward H.

AU - Pun, Edwin Y.B.

AU - Raupp, Gregory B.

AU - Allee, David R.

AU - Ho, Johnny C.

PY - 2013

Y1 - 2013

N2 - In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

AB - In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2 V -1 s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

KW - InAs

KW - low-frequency noise

KW - nanowire (NW) parallel arrays

KW - stability

KW - thin-film transistors (TFTs)

UR - https://www.scopus.com/pages/publications/84878274276

U2 - 10.1109/LED.2013.2250896

DO - 10.1109/LED.2013.2250896

M3 - 文章

AN - SCOPUS:84878274276

SN - 0741-3106

VL - 34

SP - 765

EP - 767

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 6515612

ER -

Stability and low-frequency noise in InAs NW parallel-array thin-film transistors

摘要

访问文件

其它文件与链接

学术指纹

引用此