@inproceedings{3da9c658a74d4d549cd24a3b3ccc0ee0,
title = "Synthesis, characterization and device applications of InGaAs nanowires",
abstract = "As a type of promising nanomaterials, semiconductor nanowires have been extensively studied in the past few years; however, the difficulty of synthesizing nanowires with desirable morphology and high crystal quality hinders the further development. In this study, we provide a simple two-step method to synthesize nanowires with smooth surface, excellent crystal quality and large processing window. These ternary InGaAs nanowires exhibit outstanding electrical performance with high Ion/Ioff ratio (∼106) and electron mobility (∼1300 cm2/Vs), which could be utilized in future integrated circuits.",
author = "Hou, \{Jared J.\} and Ning Han and Fengyun Wang and Yip, \{Sen Po\} and Fei Xiu and Hung, \{Tak Fu\} and Ho, \{Johnny C.\}",
year = "2013",
doi = "10.1149/05006.0179ecst",
language = "英语",
isbn = "9781607683544",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "179--185",
booktitle = "Low-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012",
address = "美国",
edition = "6",
note = "Symposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 ; Conference date: 07-10-2012 Through 12-10-2012",
}