Te nanomesh/black-Si van der Waals Heterostructure for High-Performance Photodetector

Van der Waals (vdW) heterostructures have gained significant attention in photodetectors due to their seamless integration with materials possessing diverse functionalities. In this study, the fabrication of a Te nanomesh/black-Si vdW heterostructure is presented, and investigated its photoresponse properties. The heterostructure exhibits a pronounced rectification behavior, characterized by a rectification ratio of 2.2 × 10⁴. Notably, the heterostructure device demonstrates commendable photoresponse properties, including a high responsivity of 350 mA W⁻¹, an extensive linear dynamic range of 45.5 dB, a high specific detectivity of 9.6 × 10¹¹ Jones, and a wide spectral response ranging from 400 to 1550 nm. Furthermore, the heterostructure exhibits rapid response, with a rise time and a decay time of 70 and 140 µs, respectively. These exceptional photoresponse properties can be attributed to the robust internal built-in electrical field at the hetero-interface and the augmented light absorption in black-Si. The outstanding photoresponse properties of the heterostructure make it a promising candidate for multiwavelength single-pixel imaging, enabling the collection of mask patterns under varying wavelengths of light radiation. This work provides a novel approach for fabricating mixed-dimensional vdW heterostructures, offering promising prospects for advancements in optoelectronics.