TY - JOUR
T1 - The influence of structural properties on conductivity and luminescence of MBE grown InN
AU - Specht, P.
AU - Armitage, R.
AU - Ho, J.
AU - Gunawan, E.
AU - Yang, Q.
AU - Xu, X.
AU - Kisielowski, C.
AU - Weber, E. R.
PY - 2004/8/15
Y1 - 2004/8/15
N2 - Within the last few years indium nitride (InN) gained substantial interest due to its controversially discussed apparent band gap and its predicted highest maximum electron mobility among several III-V compounds, including Al(Ga)N and GaAs. The band gap of epitaxial InN has been recently reported to be around 0.7eV rather than the previously accepted value of 1.9eV obtained from polycrystalline films. Thus, InN could be a promising material for applications in infrared opto-electronics or high-speed electronics. However, the structural quality of the InN epilayers is still inferior to GaN and needs to be improved. Also, the role of many contaminants in InN and their effect on the epilayer's conductivity and/or luminescence properties is still under investigation. This work describes recent studies of InN growth by molecular beam epitaxy on sapphire (0001) substrates. The effect of buffer layer variations including a prior substrate nitridation step is discussed. Structural properties (X-ray diffraction, AFM and TEM images) and chemical profiles (SIMS) will be correlated to Hall data and Photo-luminescence spectra. The role of oxygen and hydrogen as possible donors in InN will be discussed.
AB - Within the last few years indium nitride (InN) gained substantial interest due to its controversially discussed apparent band gap and its predicted highest maximum electron mobility among several III-V compounds, including Al(Ga)N and GaAs. The band gap of epitaxial InN has been recently reported to be around 0.7eV rather than the previously accepted value of 1.9eV obtained from polycrystalline films. Thus, InN could be a promising material for applications in infrared opto-electronics or high-speed electronics. However, the structural quality of the InN epilayers is still inferior to GaN and needs to be improved. Also, the role of many contaminants in InN and their effect on the epilayer's conductivity and/or luminescence properties is still under investigation. This work describes recent studies of InN growth by molecular beam epitaxy on sapphire (0001) substrates. The effect of buffer layer variations including a prior substrate nitridation step is discussed. Structural properties (X-ray diffraction, AFM and TEM images) and chemical profiles (SIMS) will be correlated to Hall data and Photo-luminescence spectra. The role of oxygen and hydrogen as possible donors in InN will be discussed.
KW - A1. Crystal structure
KW - A1. Impurities in thin films
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - B1. Indium nitride
UR - https://www.scopus.com/pages/publications/3342941787
U2 - 10.1016/j.jcrysgro.2004.05.097
DO - 10.1016/j.jcrysgro.2004.05.097
M3 - 会议文章
AN - SCOPUS:3342941787
SN - 0022-0248
VL - 269
SP - 111
EP - 118
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
T2 - Proceedings of the First ONR International Indium Nitride Work
Y2 - 16 November 2003 through 20 November 2003
ER -