Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Ning Han; Fengyun Wang; Jared J. Hou; Sen Po Yip; Hao Lin; Fei Xiu; Ming Fang; Zaixing Yang; Xiaoling Shi; Guofa Dong; Tak Fu Hung; Johnny C. Ho

doi:10.1002/adma.201301362

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

Ning Han
, Fengyun Wang
, Jared J. Hou
, Sen Po Yip
, Hao Lin
, Fei Xiu
, Ming Fang
, Zaixing Yang
, Xiaoling Shi
, Guofa Dong
, Tak Fu Hung
, Johnny C. Ho^*

^*此作品的通讯作者

City University of Hong Kong

科研成果: 期刊稿件 › 文章 › 同行评审

69 引用（Scopus）

摘要

A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.

源语言	英语
页（从-至）	4445-4451
页数	7
期刊	Advanced Materials
卷	25
期	32
DOI	https://doi.org/10.1002/adma.201301362
出版状态	已出版 - 27 8月 2013
已对外发布	是

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title = "Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors",

abstract = "A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.",

keywords = "contact printing, III-V nanowire field-effect transistors, inverters, metal decoration, n-channel metal-oxide-semiconductor (NMOS), threshold voltage modulation",

author = "Ning Han and Fengyun Wang and Hou, \{Jared J.\} and Yip, \{Sen Po\} and Hao Lin and Fei Xiu and Ming Fang and Zaixing Yang and Xiaoling Shi and Guofa Dong and Hung, \{Tak Fu\} and Ho, \{Johnny C.\}",

year = "2013",

month = aug,

day = "27",

doi = "10.1002/adma.201301362",

language = "英语",

volume = "25",

pages = "4445--4451",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

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TY - JOUR

T1 - Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

AU - Han, Ning

AU - Wang, Fengyun

AU - Hou, Jared J.

AU - Yip, Sen Po

AU - Lin, Hao

AU - Xiu, Fei

AU - Fang, Ming

AU - Yang, Zaixing

AU - Shi, Xiaoling

AU - Dong, Guofa

AU - Hung, Tak Fu

AU - Ho, Johnny C.

PY - 2013/8/27

Y1 - 2013/8/27

N2 - A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.

AB - A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.

KW - contact printing

KW - III-V nanowire field-effect transistors

KW - inverters

KW - metal decoration

KW - n-channel metal-oxide-semiconductor (NMOS)

KW - threshold voltage modulation

UR - https://www.scopus.com/pages/publications/84882706953

U2 - 10.1002/adma.201301362

DO - 10.1002/adma.201301362

M3 - 文章

AN - SCOPUS:84882706953

SN - 0935-9648

VL - 25

SP - 4445

EP - 4451

JO - Advanced Materials

JF - Advanced Materials

IS - 32

ER -

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors

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